QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 An investigation on the oxidation behavior of spatters generated during the laser powder bed fusion of 316L stainless steel 期刊论文 Applied Surface Science, 2022, 卷号: 586 作者:  Lu, Chao;  Zhang, Ruihua;  Wei, Xiaohong;  Xiao, Mengzhi;  Yin, Yan 收藏  |  浏览/下载：21/0  |  提交时间：2022/04/21 Austenitic stainless steel  Electron diffraction  Energy dispersive spectroscopy  High resolution transmission electron microscopy  Manganese oxide  Oxidation  Schematic diagrams  Silica  316 L stainless steel  High-resolution scanning electron microscopies  Laser powder bed fusion  Laser powders  Oxidation behaviours  Oxide islands  Powder bed  Scanning transmission electron microscopy  Spatter  Surface characterization   Undercooling evolution of pure Sn droplets in various atmospheres based on fast scanning calorimetry 期刊论文 CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 页码: 2455-2459 作者:  Zhao, Bingge[1];  Li, Linfang[2];  Zhai, Qijie[3];  Gao, Yulai[4] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/30 Rapid solidification  Undercooling  Testing atmosphere  Sn droplets  Oxide islands   Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113 Jin, L; Zhou, HY; Qu, SC; Wang, ZG 收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06 Patterned substrate  Ion implantation  Ordered nanodots  Anodic aluminum oxide  QUANTUM DOTS  ISLANDS  GROWTH  SEMICONDUCTORS  NANOSTRUCTURES  COMPUTATION  INGAAS   Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 281, 期号: 2-4, 页码: 275-280 Di, ZF; Huang, AP; Chu, PK; Zhang, M; Liu, WL; Song, ZT; Luo, SH; Lin, CL 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 MOBILITY ENHANCEMENT  RAMAN-SCATTERING  HIGH-PERFORMANCE  COMPLIANT OXIDE  N-MOSFETS  OXIDATION  SUBSTRATE  STABILITY  ELECTRON  ISLANDS   Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation 期刊论文 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 卷号: 23, 期号: 4, 页码: 1637-1640 Di, ZF; Zhang, M; Liu, WL; Luo, SH; Song, ZT; Lin, CL; Huang, AP; Chu, PK 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24 HOLE MOBILITY ENHANCEMENT  STRAINED-SI  OXIDATION BEHAVIOR  HIGH-PERFORMANCE  COMPLIANT OXIDE  N-MOSFETS  GERMANIUM  SUBSTRATE  ELECTRON  ISLANDS