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FeMo sub-nanoclusters/single atoms for neutral ammonia electrosynthesis 会议论文
作者:  Liu, Wei;  Han, Lili;  Wang, Hsiao-Tsu;  Zhao, Xueru;  Boscoboinik, J. Anibal
收藏  |  浏览/下载:12/0  |  提交时间:2020/12/18
FeMo sub-nanoclusters/single atoms for neutral ammonia electrosynthesis 期刊论文
Nano Energy, 2020, 卷号: 77
作者:  Liu, Wei;  Han, Lili;  Wang, Hsiao-Tsu;  Zhao, Xueru;  Boscoboinik, J. Anibal
收藏  |  浏览/下载:13/0  |  提交时间:2022/02/17
FeMo sub-nanoclusters/single atoms for neutral ammonia electrosynthesis 期刊论文
Nano Energy, 2020, 卷号: 77
作者:  Liu, Wei;  Han, Lili;  Wang, Hsiao-Tsu;  Zhao, Xueru;  Boscoboinik, J. Anibal
收藏  |  浏览/下载:7/0  |  提交时间:2020/11/14
Deceptive pollination of Calanthe by skippers that commonly act as nectar thieves 期刊论文
ENTOMOLOGICAL SCIENCE, 2020
作者:  Luo, Huolin;  Liang, Yuelong;  Xiao, Hanwen;  Liu, Nannan;  Chen, Yanru
收藏  |  浏览/下载:21/0  |  提交时间:2021/01/05
Deceptive pollination of Calanthe by skippers that commonly act as nectar thieves 期刊论文
ENTOMOLOGICAL SCIENCE, 2019, 页码: 7
作者:  Luo, Huolin;  Liang, Yuelong;  Xiao, Hanwen;  Liu, Nannan;  Chen, Yanru
收藏  |  浏览/下载:17/0  |  提交时间:2020/03/17
Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 60, 页码: 66-70
作者:  Liu, Jianxun;  Liang, Hongwei;  Liu, Yang;  Xia, Xiaochuan;  Huang, Huolin
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/02
Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 卷号: 121, 页码: 18095-18101
作者:  Liu, Jianxun;  Liang, Hongwei;  Zheng, Xiantong;  Liu, Yang;  Xia, Xiaochuan
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/09
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2016, 卷号: 51, 期号: 17, 页码: 8233-8239
作者:  Wang, Minhuan;  Bian, Jiming;  Sun, Hongjun;  Liu, Hongzhu;  Li, Xiaoxuan
收藏  |  浏览/下载:29/0  |  提交时间:2017/02/27
Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD 期刊论文
RSC ADVANCES, 2016, 卷号: 6, 页码: 60068-60073
作者:  Liu, Jianxun;  Liang, Hongwei;  Li, Binghui;  Liu, Yang;  Xia, Xiaochuan
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/09
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2016, 卷号: 51, 页码: 8233-8239
作者:  Wang, Minhuan;  Bian, Jiming;  Sun, Hongjun;  Liu, Hongzhu;  Li, Xiaoxuan
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/09


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