QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Directing Osteogenesis of Stem Cells with Drug-Laden, Polymer-Microsphere-Based Micropatterns Generated by Teflon Microfluidic Chips 期刊论文 advanced functional materials, 2012, 卷号: 22, 期号: 18, 页码: 3799-3807 Shi XT (Shi, Xuetao); Chen S (Chen, Song); Zhou JH (Zhou, Jianhua); Yu HJ (Yu, Haijun); Li L (Li, Lei); Wu HK (Wu, Hongkai) 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/27 Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |  浏览/下载：92/14  |  提交时间：2010/03/08 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength   Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods 期刊论文 solid state communications, 2009, 卷号: 149, 期号: 43-44, 页码: 1897-1901 Zhou B; Pan SW; Chen R; Chen SY; Li C; Lai HK; Yu; JZ; Zhu XF 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/04 Strain-induced  Electrochemical anodization  Silicon germanium  Heterogeneous nanostructures  POROUS SILICON LAYER  VISIBLE PHOTOLUMINESCENCE  SURFACE-MORPHOLOGY  THIN-FILMS  SI  GERMANIUM  SUPERLATTICES  NANOCRYSTALS  RELAXATION  GROWTH   Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy 期刊论文 journal of luminescence, 2009, 卷号: 129, 期号: 9, 页码: 1073-1077 Zhou B; Pan SW; Chen SY; Li C; Lai HK; Yu JZ; Zhu XF 收藏  |  浏览/下载：91/3  |  提交时间：2010/03/08 Heterostructure  Nanostructure  Porous Si  Porous SiGe  Photoluminescence   The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513 Zhou ZW; Li C; Lai HK; Chen SY; Yu JZ 收藏  |  浏览/下载：53/12  |  提交时间：2010/03/08 characterization   Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文 applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 part 2 Zhou ZW; Cai ZM; Li C; Lai HK; Chen SY; Yu JZ 收藏  |  浏览/下载：67/0  |  提交时间：2010/03/08 Relaxed buffer   Comment on 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: art. no. 156102 Zhou ZW; Li C; Chen SY; Lai HK; Yu JZ 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/08 THERMAL-EXPANSION   Energy band design for Si/SiGe quantum cascade laser 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4137-4142 Lin GJ (Gui-Jiang, Lin); Zhou ZW (Zhou Zhi-Wen); Lai HK (Lai Hong-Kai); Li C (Li Cheng); Chen SY (Chen Song-Yan); Yu JZ (Yu Jin-Zhong) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 SiGe material