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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Self-Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics 期刊论文 advanced materials, 2014, 卷号: 26, 期号: 17, 页码: 2710-2717 Yu, Y; Dou, XM; Wei, B; Zha, GW; Shang, XJ; Wang, L; Su, D; Xu, JX; Wang, HY; Ni, HQ; Sun, BQ; Ji, Y; Han, XD; Niu, ZC 收藏  |  浏览/下载：29/0  |  提交时间：2015/04/02 Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文 semiconductor science and technology, 2012, 卷号: 27, 期号: 11, 页码: 115010 Wang LJ (Wang, Lijuan); He JF (He, Jifang); Shang XJ (Shang, Xiangjun); Li MF (Li, Mifeng); Yu Y (Yu, Ying); Zha GW (Zha, Guowei); Ni HQ (Ni, Haiqiao); Niu ZC (Niu, Zhichuan) 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/26 An effective reflectance method for designing broadband antireflection films coupled with solar cells 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 3, 页码: 37802 Zhan, F; He, JF; Shang, XJ; Li, MF; Ni, HQ; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17 Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102 作者:  Li MF 收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05 molecular beam epitaxy  anti-phase domain  GaAs/Ge interface  CHEMICAL VAPOR-DEPOSITION  JUNCTION SOLAR-CELLS  DOMAIN-FREE GROWTH  TEMPERATURE  QUALITY  FUTURE   Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文 applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113514 Shang XJ; He JF; Li MF; Zhan F; Ni HQ; Niu ZC; Pettersson H; Fu Y 收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06 WELL INFRARED PHOTODETECTOR  PHOTOCURRENT  EFFICIENCY   GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102 He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC 收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE   Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres 期刊论文 polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537 Ni XW; Hu XJ; Zhou SY; Sun CH; Bai XX; Chen P 收藏  |  浏览/下载：59/2  |  提交时间：2011/07/05 conducting polymers  hollow microspheres  microwave absorbing properties  poly(3,4-ethylenedioxythiophene) (PEDOT)  POLY 3,4-ETHYLENEDIOXYTHIOPHENE  CORE-SHELL  HOLLOW  POLYMERIZATION  POLYANILINE  SURFACE  ELECTROCHEMISTRY  POLYTHIOPHENES  NANOPARTICLES  DISPERSION   The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文 journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203 Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.) 收藏  |  浏览/下载：77/6  |  提交时间：2010/08/17 InAs quantum dots  nonlinear refraction  reflection Z-scan  dc electric field effect  ELECTROOPTIC PROPERTIES  SATURABLE ABSORBER  OPTICAL-PROPERTIES  WELL STRUCTURES  SINGLE-BEAM  BAND-GAP  ELECTROABSORPTION  ABSORPTION  REFLECTION  DEPENDENCE   Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600 作者:  Zhang XH 收藏  |  浏览/下载：80/0  |  提交时间：2010/04/28 Ultrathin InAs monolayer  Hole spin relaxation  DP mechanism  SEMICONDUCTOR QUANTUM DOTS  WELLS  GAAS   The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy 期刊论文 optics communications, 2010, 卷号: 283, 期号: 7, 页码: 1510-1513 作者:  Zhang XH 收藏  |  浏览/下载：145/2  |  提交时间：2010/04/22 InAs quantum dots  Nonlinear refraction  Reflection Z-scan  REFLECTION Z-SCAN  OPTICAL NONLINEARITIES  2-PHOTON ABSORPTION  SATURABLE ABSORBER  WELL STRUCTURES  SINGLE-BEAM  ELECTROABSORPTION  DISPERSION  SOLIDS  GAAS