Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots

	Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
	Wang LJ (Wang, Lijuan) ; He JF (He, Jifang) ; Shang XJ (Shang, Xiangjun) ; Li MF (Li, Mifeng) ; Yu Y (Yu, Ying) ; Zha GW (Zha, Guowei) ; Ni HQ (Ni, Haiqiao) ; Niu ZC (Niu, Zhichuan)
刊名	semiconductor science and technology
	2012
卷号	27 期号:11 页码:115010
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23784]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang LJ ,He JF ,Shang XJ ,et al. Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots[J]. semiconductor science and technology,2012,27(11):115010.
APA	Wang LJ .,He JF .,Shang XJ .,Li MF .,Yu Y .,...&Niu ZC .(2012).Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots.semiconductor science and technology,27(11),115010.
MLA	Wang LJ ,et al."Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots".semiconductor science and technology 27.11(2012):115010.