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Substrate emitting vertical-cavity surface-emitting laser 专利
专利号: US10461507, 申请日期: 2019-10-29, 公开日期: 2019-10-29
作者:  SIRBU, ALEXEI;  IAKOVLEV, VLADIMIR;  BERK, YURI;  MENTOVICH, ELAD
收藏  |  浏览/下载:33/0  |  提交时间:2019/12/23
Vertical cavity surface emitting laser device with integrated tunnel junction 专利
专利号: EP3540879A1, 申请日期: 2019-09-18, 公开日期: 2019-09-18
作者:  WEICHMANN, ULRICH;  SCHEMMANN, MARCEL FRANZ CHRISTIAN
收藏  |  浏览/下载:38/0  |  提交时间:2019/12/30
Heavy ion irradiation induced hard error in MTJ of the MRAM memory array 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:  Zhao, P. X.;  Liu, T. Q.;  Cai, C.;  Li, D. Q.;  Ji, Q. G.
收藏  |  浏览/下载:6/0  |  提交时间:2022/01/19
Vertical-cavity surface-emitting laser with high modulation speed 专利
专利号: US10396527, 申请日期: 2019-08-27, 公开日期: 2019-08-27
作者:  SIRBU, ALEXEI;  IAKOVLEV, VLADIMIR;  BERK, YURI;  KALIFA, ITSHAK;  MENTOVICH, ELAD
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/24
Epitaxial planarization of tunnel junction and alike vcsel array and method therefor 专利
专利号: US20190252858A1, 申请日期: 2019-08-15, 公开日期: 2019-08-15
作者:  RIAZIAT, MAJID;  PAO, YI-CHING;  WU, TA-CHUNG
收藏  |  浏览/下载:25/0  |  提交时间:2019/12/30
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860
作者:  Wu, Bi;  Zhang, Beibei;  Cheng, Yuanqing;  Wang, Ying;  Liu, Dijun
收藏  |  浏览/下载:69/0  |  提交时间:2019/12/10
Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate 期刊论文
CURRENT APPLIED PHYSICS, 2019, 卷号: 19, 期号: 7, 页码: 811-816
作者:  Guo, Xueqi;  Zeng, Yuheng;  Zhang, Zhi;  Huang, Yuqing;  Liao, Mingdun
收藏  |  浏览/下载:102/0  |  提交时间:2019/06/25
Influence of test model material on the accuracy of transient heat transfer measurements in impulse facilities 期刊论文
EXPERIMENTAL THERMAL AND FLUID SCIENCE, 2019, 卷号: 104, 页码: 59-66
作者:  Wang Q(汪球);  Olivier H;  Einhoff J;  Li JP(李进平);  Zhao W(赵伟)
收藏  |  浏览/下载:46/0  |  提交时间:2019/05/29
Iii-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent 专利
专利号: US20190165213A1, 申请日期: 2019-05-30, 公开日期: 2019-05-30
作者:  YONKEE, BENJAMIN P.;  YOUNG, ERIN C.;  SPECK, JAMES S.;  DENBAARS, STEVEN P.;  NAKAMURA, SHUJI
收藏  |  浏览/下载:29/0  |  提交时间:2019/12/31


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