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科研机构
半导体研究所 [23]
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期刊论文 [21]
会议论文 [2]
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2017 [1]
2009 [1]
2008 [2]
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半导体物理 [23]
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Absence of redshift in the direct bandgap of silicon nanocrystals with reduced size
期刊论文
Nat Nanotechnol, 2017, 卷号: 12, 页码: 930–932
作者:
Luo JW
;
Li SS
;
Sychugov I
;
Pevere F
;
Linnros J
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2018/06/15
Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 12, 页码: art.no.127101
Wang, WJ (Wang Wen-Jie)
;
Deng, JJ (Deng Jia-Jun)
;
Fu, XQ (Fu Xing-Qiu)
;
Hu, B (Hu Bing)
;
Ding, K (Ding Kun)
收藏
  |  
浏览/下载:230/52
  |  
提交时间:2010/03/08
TEMPERATURE-DEPENDENCE
Raman and infrared properties and layer dependence of the phonon dispersions in multilayered graphene
期刊论文
physical review b, 2008, 卷号: 77, 期号: 23, 页码: art. no. 235421
Jiang, JW
;
Tang, H
;
Wang, BS
;
Su, ZB
收藏
  |  
浏览/下载:72/11
  |  
提交时间:2010/03/08
LATTICE-DYNAMICS
GRAPHITE
FILMS
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3440-3443
Dou, XM
;
Sun, BQ
;
Xiong, YH
;
Huang, SS
;
Ni, HQ
;
Niu, ZC
收藏
  |  
浏览/下载:69/1
  |  
提交时间:2010/03/08
CARRIER RELAXATION
ENERGY RELAXATION
LINE-SHAPE
EMISSION
DENSITY
Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere
期刊论文
physica b-condensed matter, 2007, 卷号: 396, 期号: 1-2, 页码: 95-101
Zhu BL
;
Zhao XZ
;
Su FH
;
Li GH
;
Wu XG
;
Wu J
;
Wu R
;
Liu J
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/29
ZnO
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
期刊论文
solid state communications, 2004, 卷号: 132, 期号: 6, 页码: 421-424
Gong Z
;
Fang ZD
;
Xu XH
;
Miao ZH
;
Niu ZC
;
Feng SL
收藏
  |  
浏览/下载:153/33
  |  
提交时间:2010/03/09
quantum dot
Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 6, 页码: 942-943
Ma DW
;
Ye ZZ
;
Huang JY
;
Zhao BH
;
Wan SK
;
Sun XH
;
Wang ZG
收藏
  |  
浏览/下载:386/2
  |  
提交时间:2010/08/12
PHASE EPITAXIAL-GROWTH
PHOTOLUMINESCENT PROPERTIES
SPRAY-PYROLYSIS
ZNO
MGXZN1-XO
Optical properties of AIInGaN quaternary alloys
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Huang JS
;
Dong X
;
Luo XD
;
Liu XL
;
Xu ZY
;
Ge WK
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
LIGHT-EMITTING-DIODES
LOCALIZED EXCITONS
LUMINESCENCE
RELAXATION
SILICON
BAND
Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570
Wang YQ
;
Chen WD
;
Chen CY
;
Diao HW
;
Zhang SB
;
Xu YY
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
silicon-rich silicon oxide
microstructure
light-emission
rapid thermal annealing
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
POROUS SILICON
SI
LUMINESCENCE
NANOCRYSTALS
SPECTRA
SYSTEM
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