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CORC

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Narrow-gap physical vapour deposition synthesis of ultrathin SnS 1−x Se x (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties 期刊论文
Nanoscale, 2018, 卷号: 10, 期号: 8, 页码: 8787-8795
作者:  Wei Gao;  Yongtao Li;  Jianhua Guo;  Muxun Ni;  Ming Liao;  Haojie Mo;  Jingbo Li
收藏  |  浏览/下载：13/0  |  提交时间：2019/09/22
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文
journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254
Chen L (Chen L.); Yan S (Yan S.); Xu PF (Xu P. F.); Lu J (Lu J.); Deng JJ (Deng J. J.); Ji Y (Ji Y.); Wang KY (Wang K. Y.); Zhao JH (Zhao J. H.)
收藏  |  浏览/下载：90/4  |  提交时间：2010/09/07
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801
作者:  You JB;  Zhang XW;  Fan YM;  Tan HR
收藏  |  浏览/下载：368/49  |  提交时间：2010/03/08
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.)
收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11

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