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科研机构
半导体研究所 [18]
内容类型
期刊论文 [16]
会议论文 [2]
发表日期
2011 [2]
2010 [2]
2009 [3]
2008 [3]
2007 [1]
2006 [2]
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半导体物理 [18]
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Native p-type transparent conductive CuI via intrinsic defects
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907
Wang J
;
Li JB
;
Li SS
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  |  
浏览/下载:35/0
  |  
提交时间:2012/01/06
HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS
AUGMENTED-WAVE METHOD
COPPER HALIDES
BAND-STRUCTURE
II-VI
SEMICONDUCTORS
EMISSION
DIAMOND
CUBR
CUCL
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:
Wang LG
;
Chen L
;
Zhu H
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  |  
浏览/下载:43/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Origins of magnetism in transition metal doped Cul
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713
Wang J (Wang Jing)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
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  |  
浏览/下载:86/0
  |  
提交时间:2010/10/11
AUGMENTED-WAVE METHOD
OPTICAL-PROPERTIES
CUPROUS HALIDES
COPPER HALIDES
BAND-STRUCTURE
CUBR
PHOTOEMISSION
PRESSURE
DENSITY
STATES
Codoping of magnesium with oxygen in gallium nitride nanowires
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 10, 页码: art. no. 103112
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
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  |  
浏览/下载:30/3
  |  
提交时间:2010/04/13
MOLECULAR-BEAM EPITAXY
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
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  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
The bipolar doping of ZnS via native defects and external dopants
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
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  |  
浏览/下载:131/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:
Wei HY
;
Jiao CM
;
Song HP
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  |  
浏览/下载:235/41
  |  
提交时间:2010/03/08
aluminium compounds
conduction bands
energy gap
high electron mobility transistors
III-V semiconductors
magnesium compounds
passivation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons
期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 11, 页码: 7210-7215
Hua, L
;
Song, GF
;
Guo, BS
;
Wang, WM
;
Zhang, Y
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  |  
浏览/下载:58/0
  |  
提交时间:2010/03/08
surface plasmon
doped semiconductor
enhanced transmission
doping tuned
Effect on nitrogen acceptor as Mg is alloyed into ZnO
期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ
;
Yao, B
;
Wei, ZP
;
Li, YF
;
Lu, YM
;
Shen, DZ
;
Zhang, JY
;
Zhao, DX
;
Fan, XW
;
Li, JB
;
Xia, JB
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  |  
浏览/下载:59/0
  |  
提交时间:2010/03/08
P-TYPE ZNO
II-VI
BAND-GAP
SEMICONDUCTORS
FILMS
MGXZN1-XO
EPITAXY
Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides
期刊论文
physical review b, 2008, 卷号: 77, 期号: 11, 页码: art. no. 113202
Wang, F
;
Li, JB
;
Li, SS
;
Xia, JB
;
Wei, SH
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
SPECIAL QUASIRANDOM STRUCTURES
AUGMENTED-WAVE METHOD
BASIS-SET
SEMICONDUCTORS
LATTICE
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