Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides

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	Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides
	Wang, F ; Li, JB ; Li, SS ; Xia, JB ; Wei, SH
刊名	physical review b
	2008
卷号	77 期号:11 页码:art. no. 113202
关键词	SPECIAL QUASIRANDOM STRUCTURES AUGMENTED-WAVE METHOD BASIS-SET SEMICONDUCTORS LATTICE
ISSN号	1098-0121
通讯作者	wang, f, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jbli@semi.ac.cn
中文摘要	the mg-ga acceptor energy levels in gan and random al8in4ga20n32 quaternary alloys are calculated using the first-principles band-structure method. we show that due to wave function localization, the mgga acceptor energy level in the alloy is significantly lower than that of gan, although the two materials have nearly identical band gaps. our study demonstrates that forming alxinyga1-x-yn quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6758]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, F,Li, JB,Li, SS,et al. Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides[J]. physical review b,2008,77(11):art. no. 113202.
APA	Wang, F,Li, JB,Li, SS,Xia, JB,&Wei, SH.(2008).Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides.physical review b,77(11),art. no. 113202.
MLA	Wang, F,et al."Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides".physical review b 77.11(2008):art. no. 113202.