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Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 10, 页码: 105010
作者:  Zhang, Yuheng;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
收藏  |  浏览/下载：14/0  |  提交时间：2022/03/28
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence 期刊论文
Nanotechnology, 2019, 卷号: 30, 期号: 4, 页码: 045604
作者:  Shaoteng Wu;  Liancheng Wang;  Zhiqiang Liu;  Xiaoyan Yi;  Yunyu Wang;  Cheng Cheng;  Chen Lin;  Tao Feng;  Shuo Zhang;  Tao Li;  Tongbo Wei;  Jianchang Yan;  Guodong Yuan;  Junxi Wang;  Jinmin Li
收藏  |  浏览/下载：51/0  |  提交时间：2019/11/19
Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice 期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 26642−26647
作者:  Han Bi;  Xi Han;  Lu Liu;  Yunhao Zhao;  Xuebing Zhao
收藏  |  浏览/下载：30/0  |  提交时间：2018/06/15
An integrated method for cell isolation and migration on a chip 期刊论文
ScientificReports, 2017, 卷号: 7, 页码: 8963
作者:  Xiaoqing Lv;  Zhaoxin Geng;  Zhiyuan Fan;  Shicai Wang;  WeiHua Pei
收藏  |  浏览/下载：22/0  |  提交时间：2018/07/02
Adsorbate migration effects on continuous and discontinuous temperature-dependent transitions in the quality factors of graphene nanoresonators 期刊论文
nanotechnology, 2014, 卷号: 25, 期号: 2, 页码: 025501
Jiang, JW; Wang, BS; Park, HS; Rabczuk, T
收藏  |  浏览/下载：31/0  |  提交时间：2015/03/25
Growth simulations of self-assembled nanowires on stepped substrates 期刊论文
Ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
作者:  Liang, Song;  Kong, Duanhua;  Zhu, Hongliang;  Wang, Wei
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Origin of the low thermal conductivity of the thermoelectric material beta-zn4sb3: an ab initio theoretical study 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 3
作者:  Chen, Weibing;  Li, Jingbo
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhou, X. L.;  Chen, Y. H.;  Li, T. F.;  Zhou, G. Y.;  Zhang, H. Y.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Vls growth of siox nanowires with a stepwise nonuniformity in diameter 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: 5
作者:  Huang, Shengli;  Wu, Yan;  Zhu, Xianfang;  Li, Lunxiong;  Wang, Zhanguo
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05

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