The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition

doi:10.1039/c8ce00287h

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition
	Jiang, K.; Sun, X. J.; Ben, J. W.; Jia, Y. P.; Liu, H. N.; Wang, Y.; Wu, Y.; Kai, C. H.; Li, D. B.
刊名	Crystengcomm
	2018
卷号	20 期号:19 页码:2720-2728
关键词	light-emitting-diodes screw dislocations threading dislocations phase epitaxy gan films algan core edge generation Chemistry Crystallography
ISSN号	1466-8033
DOI	10.1039/c8ce00287h
英文摘要	AlN homoepitaxy is a promising way to obtain high-quality AlN and Al-rich AlGaN and thus deep ultraviolet devices. The defect evolution in homoepitaxial AlN grown by high-temperature metal-organic chemical vapor deposition on AlN/sapphire templates was studied here. The schematic defect evolution model was given and the driving force of the dislocation motion was analyzed. Experimental results revealed that the dislocation line deflection angles changed differently for different types of threading dislocation at the interface of the AlN/sapphire template and the epilayer. The interface stress was considered to be the driving force of dislocation motion. The driving force needed for the change of deflection angles followed the sequence of pure screw dislocation > mixed dislocation > pure edge dislocation. The defect density exhibited a strong relationship with the strain states, indicating that the control of interface stress was an effective way to control the quality of homoepitaxial AlN. These results can not only provide deeper understanding of the AlN homoepitaxy mechanism, but also offer a way to grow high-quality AlN.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60831]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Jiang, K.,Sun, X. J.,Ben, J. W.,et al. The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition[J]. Crystengcomm,2018,20(19):2720-2728.
APA	Jiang, K..,Sun, X. J..,Ben, J. W..,Jia, Y. P..,Liu, H. N..,...&Li, D. B..(2018).The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition.Crystengcomm,20(19),2720-2728.
MLA	Jiang, K.,et al."The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition".Crystengcomm 20.19(2018):2720-2728.