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科研机构
半导体研究所 [11]
内容类型
期刊论文 [7]
会议论文 [4]
发表日期
2008 [1]
2007 [1]
2005 [1]
2003 [1]
2002 [1]
2001 [4]
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半导体材料 [11]
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Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
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  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
The correlation between preferred orientation and performance of ITO thin films
期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18 suppl.1, 期号: 0, 页码: s411-s414
Chen Y (Chen Yao)
;
Zhou YQ (Zhou Yuqin)
;
Zhang QF (Zhang Qunfang)
;
Zhu MF (Zhu Meifang)
;
Liu FZ (Liu Fengzhen)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/29
ELECTRICAL-PROPERTIES
Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2069-2073
作者:
Wang Jun
;
Wang Jun
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/23
Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 230-238
Wan DY
;
Wang YT
;
Wang BY
;
Ma CX
;
Sun H
;
Wei L
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  |  
浏览/下载:34/0
  |  
提交时间:2010/08/12
crystal structure
sulfidation of iron films
iron pyrite films
semiconducting materials
solar cells
THIN-FILMS
ELECTRODEPOSITION
ATMOSPHERE
PRESSURE
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:
Zhang SM
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  |  
浏览/下载:92/4
  |  
提交时间:2010/08/12
crystal morphology
doping
surface structure
metalorgamc chemical vapor deposition
nitrides
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
FILMS
CATHODOLUMINESCENCE
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:84/11
  |  
提交时间:2010/08/12
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
期刊论文
thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
收藏
  |  
浏览/下载:159/11
  |  
提交时间:2010/08/12
poly-Si
structure
hot-wire
plasma-enhanced chemical vapor deposition (PECVD)
CHEMICAL-VAPOR-DEPOSITION
MICROCRYSTALLINE SILICON
HYDROGEN
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
会议论文
1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
poly-Si
structure
hot-wire
plasma-enhanced chemical vapor deposition (PECVD)
CHEMICAL-VAPOR-DEPOSITION
MICROCRYSTALLINE SILICON
HYDROGEN
Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions
期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50
Hayakawa Y
;
Okano Y
;
Hirata A
;
Imaishi N
;
Kumagiri Y
;
Zhong X
;
Xie X
;
Yuan B
;
Wu F
;
Liu H
;
Yamaguchi T
;
Kumagawa M
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
microgravity
Chinese recoverable satellite
GaSb
InxGa1-xSb
dissolution
recrystallization
orientation
FLOATING-ZONE GROWTH
INXGA1-XSB CRYSTALS
GASB
MELT
INSB
DIFFUSION
SILICON
CONVECTION
STRIATION
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