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Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
journal of applied physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502
Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25
Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 2, 页码: 023713
Zhou, W.Z; Wang, W; Chang, Z.G; Wang, Y.Z; Lan, Z.Q; Shang, L.Y; Lin, T; Cui, L.J; Zeng, Y.P; Li, G.X; Yu, C.H; Guo, J; Chu, J.H
收藏  |  浏览/下载：15/0  |  提交时间：2013/05/07
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  Zhang Y;  Li YB
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 63707
Wei LM; Gao KH; Liu XZ; Zhou WZ; Cui LJ; Zeng YP; Yu G; Yang R; Lin T; Shang LY; Guo SL; Dai N; Chu JH; Austing DG
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Fast simultaneous measurement of multi-gases using quantum cascade laser photoacoustic spectroscopy 期刊论文
applied physics b-lasers and optics, 2011, 卷号: 103, 期号: 3, 页码: 743-747
作者:  Li L
收藏  |  浏览/下载：36/2  |  提交时间：2011/07/05
SENSOR  
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14
OXYGEN  GATE  DIFFUSION  FILMS  
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08

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