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科研机构
半导体研究所 [14]
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期刊论文 [14]
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2012 [2]
2011 [2]
2010 [2]
2009 [1]
2006 [3]
1998 [3]
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半导体材料 [14]
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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin)
;
Wang XL (Wang, Xiaoliang)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Chen H (Chen, Hong)
;
Bi Y (Bi, Yang)
;
Deng QW (Deng, Qinwen)
;
Zhang JW (Zhang, Jingwen)
;
Hou X (Hou, Xun)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin
;
Wang, Xiaoliang
;
Xiao, Hongling
;
Wang, Cuimei
;
Chen, Hong
;
Bi, Yang
;
Deng, Qinwen
;
Zhang, Jingwen
;
Hou, Xun
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2013/04/19
Electron mobility in modulation-doped AlSb/InAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:
Zhang Y
;
Li YB
收藏
  |  
浏览/下载:53/5
  |  
提交时间:2011/07/05
ACOUSTIC-PHONON-SCATTERING
LOW-POWER APPLICATIONS
TRANSPORT-PROPERTIES
INTERFACE ROUGHNESS
INAS/ALSB HEMTS
HETEROSTRUCTURES
INAS
TRANSISTORS
GAS
LAYERS
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong)
;
Yin H (Yin Hong)
;
Zhu QS (Zhu Qinsheng)
;
Sakaki H (Sakaki Hiroyuki)
;
Jiang C (Jiang Chao)
收藏
  |  
浏览/下载:204/41
  |  
提交时间:2010/10/11
PHOTOLUMINESCENCE
HETEROJUNCTIONS
SPECTROSCOPY
SYSTEMS
PHYSICS
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.)
;
Jiang Y (Jiang Y.)
;
Zhang XW (Zhang X. W.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/14
BARRIER STRUCTURE
MAGNETIC-FIELD
POLARIZATION
CONDUCTANCE
DEVICE
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:
Liu J
;
Zhu H
收藏
  |  
浏览/下载:72/2
  |  
提交时间:2010/03/08
HEMT
2DEG
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE
OPTICAL-PROPERTIES
ZINC-OXIDE
THIN-FILMS
VAPOR-DEPOSITION
SI SUBSTRATE
NANOWIRES
GROWTH
EMISSION
EPITAXY
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/04/11
HEMT
heterojunction
two dimentional electron gas
self-consistent calculation
FIELD-EFFECT TRANSISTOR
TRANSPORT-PROPERTIES
QUANTUM-WELLS
HEMTS
FREQUENCY
DENSITY
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