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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu
  收藏 | 浏览/下载：23/0 | 提交时间：2018/11/30 |
| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG
收藏 | 浏览/下载：23/0 | 提交时间：2018/11/30 |
| Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu
收藏 | 浏览/下载：29/0 | 提交时间：2018/11/30 |
| High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205
作者: Yang Chen; Yu-Fei Wang; Hong-Wei Qu; Yu-Fang Zhang; Yun Liu
收藏 | 浏览/下载：35/0 | 提交时间：2018/07/02 |
| Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文
Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320
作者: Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang
收藏 | 浏览/下载：39/0 | 提交时间：2018/07/11 |
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN
收藏 | 浏览/下载：20/0 | 提交时间：2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li
收藏 | 浏览/下载：25/0 | 提交时间：2018/07/11 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：29/0 | 提交时间：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：24/0 | 提交时间：2017/03/10 |
| Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211
Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang
收藏 | 浏览/下载：18/0 | 提交时间：2017/03/10 |
