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CORC

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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
Acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: 6
作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05
Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage 期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 2, 页码: article no.21018
Li WL; Jia R; Chen C; Li HF; Liu XY; Yue HH; Ding WC; Ye TC; Kasai S; Hashizume T; Wu NJ; Xu BS
收藏  |  浏览/下载：38/2  |  提交时间：2011/07/05
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  Yu F
收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.)
收藏  |  浏览/下载：62/0  |  提交时间：2010/11/14
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102
Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia
收藏  |  浏览/下载：17/0  |  提交时间：2011/08/16
Observation of the surface circular photogalvanic effect in inn films 期刊论文
Solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
作者:  Zhang, Z.;  Zhang, R.;  Xie, Z. L.;  Liu, B.;  Li, M.
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Observation of the surface circular photogalvanic effect in InN films 期刊论文
solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Zhang Z; Zhang R; Xie ZL; Liu B; Li M; Fu DY; Fang HN; Xiu XQ; Lu H; Zheng YD; Chen YH; Tang CG; Wang ZG
收藏  |  浏览/下载：158/1  |  提交时间：2010/03/08
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Liu, ZL (Liu Zhong-Li); Zhang, ZX (Zhang Zheng-Xuan); Li, N (Li Ning); Li, GH (Li Guo-Hua)
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29
SIMOX  
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08

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