Observation of the surface circular photogalvanic effect in InN films

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	Observation of the surface circular photogalvanic effect in InN films
	Zhang Z ; Zhang R ; Xie ZL ; Liu B ; Li M ; Fu DY ; Fang HN ; Xiu XQ ; Lu H ; Zheng YD ; Chen YH ; Tang CG ; Wang ZG
刊名	solid state communications
	2009
卷号	149 期号:25-26 页码:1004-1007
关键词	InN Surface charge accumulation layer Spin-dependent current Spin splitting
ISSN号	0038-1098
通讯作者	zhang r nanjing univ key lab adv photon & elect mat nanjing 210093 peoples r china. e-mail address: rzhang@nju.edu.cn
中文摘要	a sizable spin-dependent photocurrent related to the interband transition in inn films is observed. the surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. the homogeneous photocurrent demonstrates the existence of spin splitting in the inn surface layer, and the structure inversion asymmetry (sia)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. crown copyright (c) 2009 published by elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
资助信息	special funds for major state basic research 2006cb604905 national nature science foundation of china 60721063 608201060036073116062860776001research fund for the doctoral program of higher education of china 20050284004 973 projects 2006cb604908 2006cb921607 this work is supported by special funds for major state basic research project 973 (2006cb604905), hi-tech researchproject, national nature science foundation of china (60721063, 60820106003, 60731160628, 60776001), and the research fund for the doctoral program of higher education of china (20050284004). chen is grateful for the support from the 973 projects (2006cb604908, 2006cb921607).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7129]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Z,Zhang R,Xie ZL,et al. Observation of the surface circular photogalvanic effect in InN films[J]. solid state communications,2009,149(25-26):1004-1007.
APA	Zhang Z.,Zhang R.,Xie ZL.,Liu B.,Li M.,...&Wang ZG.(2009).Observation of the surface circular photogalvanic effect in InN films.solid state communications,149(25-26),1004-1007.
MLA	Zhang Z,et al."Observation of the surface circular photogalvanic effect in InN films".solid state communications 149.25-26(2009):1004-1007.