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	Insight into electronic structure and photocatalytic character of GaSe/MoS2 heterostructure by first-principles investigation 期刊论文 Solid State Communications, 2022, 卷号: 353 作者: Lu, Xuefeng; Cui, Tingshu; Ren, Junqiang; Guo, Xin; Xue, Hongtao 收藏 \| 浏览/下载：35/0 \| 提交时间：2022/08/09 Binding energy Calculations Energy gap Gallium compounds Hydrogen production Lattice mismatch Layered semiconductors Light Light absorption Molybdenum compounds Photocatalytic activity Redox reactions Selenium compounds Semiconductor quantum wells Electronic.structure First principle calculations First principles First-principles investigations Gase/MoS2 Photo-catalytic Photocatalytic character Photocatalytic property Structure property Two-dimensional
	Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者: X.-H.Xie; B.-H.Li; Z.-Z.Zhang; L.Liu; K.-W.Liu 收藏 \| 浏览/下载：4/0 \| 提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide
	Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k . p Model 期刊论文 Chinese Physics Letters, 2018, 卷号: Vol.35 No.5, 页码: 057801 作者: Chang Wang; Wenwu Pan; Kolokolov, K.; Shumin Wang 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/26
	Long-lived Single Excitons, Trions, and Biexcitons in CdSe/CdTe Type-II Colloidal Quantum WeIls 期刊论文 CHINESE JOURNAL OF CHEMICAL PHYSICS, 2017, 卷号: 30, 期号: 6, 页码: 649-656 作者: Wang, Jun-hui; Liang, Gui-jie; Wu, Kai-feng 收藏 \| 浏览/下载：56/0 \| 提交时间：2019/06/20 Solar Energy Excited State Lifetime Exciton Trion Biexciton Type-ii Quantum Wells Nanoplatelets Auger Recombination
	Bonding and electronic properties of the Cu2ZnSnS4 /WZ-ZnO interface from first-principles calculations 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 28 作者: Cheng, Yu-Wen; Tang, Fu-Ling; Xue, Hong-Tao; Liu, Hong-Xia; Gao, Bo 收藏 \| 浏览/下载：0/0 \| 提交时间：2020/11/14 Binding energy Calculations Charge transfer Copper compounds Electronic density of states Electronic properties Heterojunctions II-VI semiconductors Lattice mismatch Semiconductor quantum wells Tin compounds Zinc oxide Band offsets Cu2ZnSnS4 Density of state First-principles calculation Interface structures Interfacial adhesions Orbital hybridization ZnO layers
	Tuning the energy band-gap of crystalline gallium oxide to enhance photocatalytic water splitting: Mixed-phase junctions 期刊论文 http://dx.doi.org/10.1039/c4ta03193h, 2014 Ju, Ming-Gang; Wang, Xia; Liang, Wanz; Zhao, Y; Li, Can; 梁万珍; 赵仪收藏 \| 浏览/下载：6/0 \| 提交时间：2015/07/22 Conduction bands Electron transitions Energy gap Semiconductor quantum wells
	Band hybridization effect in InAs/GaSb based quantum wells 期刊论文 PHYSICS LETTERS A, 2013, 卷号: 377, 期号: 9, 页码: 727-730 作者: Liu, LW(刘立伟) 收藏 \| 浏览/下载：10/0 \| 提交时间：2014/01/08 Type II quantum well Band hybridization Many-body effect Exchange self-energy Minigap
	Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field 期刊论文 Solid State Communications, 2012, 卷号: Vol.152 No.18, 页码: 1753-1756 作者: Wei,XF; Li,LL; Liu,LW; Xu,W 收藏 \| 浏览/下载：1/0 \| 提交时间：2019/04/22 SEMICONDUCTOR TRANSITION
	Electronic band structure of a type-ii 'w' quantum well calculated by an eight-band k center dot p model 期刊论文 Chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: 6 作者: Yu Xiu; Gu Yong-Xian; Wang Qing; Wei Xin; Chen Liang-Hui 收藏 \| 浏览/下载：24/0 \| 提交时间：2019/05/12 Type-ii 'w' quantum well Burt-foreman hamiltonian Finite element methods
	Optical properties of inassb nanostructures embedded in ingaassb strain reducing layer 期刊论文 Physica e-low-dimensional systems & nanostructures, 2011, 卷号: 43, 期号: 4, 页码: 869-873 作者: Li, Tianfeng; Chen, Yonghai; Lei, Wen; Zhou, Xiaolong; Wang, Zhanguo 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/05/12

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