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CORC

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Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth 期刊论文
NANOMATERIALS, 8, 2023, 卷号: 13, 页码: 1382
作者:  Peng Q(彭庆);  Ma ZW(马知未);  Cai, Shixian;  Zhao S(赵帅);  Chen, Xiaojia
收藏  |  浏览/下载：10/0  |  提交时间：2023/06/15
Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes 期刊论文
Ecs Journal of Solid State Science and Technology, 2020, 卷号: 9, 期号: 4, 页码: 5
作者:  H. Wan,S. J. Zhou,S. Y. Lan and C. Q. Gui
收藏  |  浏览/下载：6/0  |  提交时间：2021/07/06
Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes 期刊论文
MATERIALS & DESIGN, 2018, 卷号: 160, 页码: 661-670
作者:  Chee, Kuan W. A.;  Guo, Wei;  Wang, John R.;  Wang, Yong;  Chen, Yue-e
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/18
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
收藏  |  浏览/下载：5/0  |  提交时间：2019/09/17
Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array 期刊论文
NANOSCALE, 2017, 卷号: 9, 期号: 40, 页码: 15477-15483
作者:  Guo, Wei;  Yang, Zhenhai;  Li, Junmei;  Yang, Xi;  Zhang, Yun
收藏  |  浏览/下载：29/0  |  提交时间：2017/12/25
Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 期号: 2
作者:  Dai, YQ;  Li, SM;  Gao, HW;  Wang, WH;  Sun, Q(孙钱)
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8
作者:  Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K
收藏  |  浏览/下载：30/0  |  提交时间：2015/12/31
Effects of rapid thermal annealing on the properties of aln films deposited by peald on algan/gan heterostructures 期刊论文
Rsc advances, 2015, 卷号: 5, 期号: 47, 页码: 37881-37886
作者:  Cao, Duo;  Cheng, Xinhong;  Xie, Ya-Hong;  Zheng, Li;  Wang, Zhongjian
收藏  |  浏览/下载：44/0  |  提交时间：2019/05/10
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：93/7  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14

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