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Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文
applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 part 2
Zhou ZW; Cai ZM; Li C; Lai HK; Chen SY; Yu JZ
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