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科研机构
新疆理化技术研究所 [11]
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期刊论文 [11]
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2021 [1]
2020 [4]
2019 [2]
2018 [2]
2017 [1]
2015 [1]
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Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
Hydrophobic modified silica particle (HMSP)-stabilized cottonseed oil emulsion for oil recovery enhancement
期刊论文
ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS, 2019, 卷号: 41, 期号: 3, 页码: 280-289
作者:
Li, ET (Li, Entian)[ 1 ]
;
Guo, LH (Guo, Lianghui)[ 1,2 ]
;
He, L (He, Long)[ 2 ]
;
Dong, RQ (Dong, Ruiqiang)[ 2 ]
;
Yasin, A (Yasin, Akram)[ 3 ]
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2019/01/03
Enhanced oil recovery
hydrophobic modified silica particles
rheology
sand pack
water-in-oil emulsion
Heavy ion-induced single event effects in active pixel sensor array
期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
作者:
Cai, YL (Cai, Yu-Long)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:129/0
  |  
提交时间:2019/01/03
CMOS active pixel sensor (APS)
SEE
Heavy ion
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors
期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
作者:
Zhang, X (Zhang, Xiang)
;
Li, YD (Li, Yu-Dong)
;
Wen, L (Wen, Lin)
;
Zhou, D (Zhou, Dong)
;
Feng, J (Feng, Jie)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2018/08/14
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
作者:
Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2018/11/20
Cmos Active Pixel Sensor
Dark Current
Quantum Efficiency
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
作者:
Ma, LD (Ma, Lindong)
;
Li, YD (Li, Yudong)
;
Guo, Q (Guo, Qi)
;
Wen, L (Wen, Lin)
;
Zhou, D (Zhou, Dong)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor
Dark Current
Fixed-pattern Noise
Quantum Efficiency
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