Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

doi:10.1016/j.rinp.2020.103443

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
	Liu, BK (Liu, Bingkai)[ 1,2,3 ]; Li, YD (Li, Yudong)[ 1,2 ]; Wen, L (Wen, Lin)[ 1,2 ]; Zhou, D (Zhou, Dong)[ 1,2 ]; Feng, J (Feng, Jie)[ 1,2 ]; Zhang, X (Zhang, Xiang)[ 1,2,3 ]; Cai, YL (Cai, Yulong)[ 1,2,3 ]; Fu, J (Fu, Jing)[ 1,2,3 ]; Chen, JW (Chen, Jiawei)[ 1,2,3 ]; Guo, Q (Guo, Qi)[ 1,2 ]
刊名	RESULTS IN PHYSICS
	2020
卷号	19 期号:12 页码:1-7
关键词	Backside illuminated CMOS image sensor Random telegraph signal Radiation effects Proton irradiation Theoretical calculation
ISSN号	2211-3797
DOI	10.1016/j.rinp.2020.103443
英文摘要	The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-mu m backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively. After exposure to protons, the radiation-induced variations of the number of RTS pixels, the number of RTS levels and transition maximum amplitude are analyzed. The effect of proton energy on RTS occurrence probability is studied using two types of theoretical models. Furthermore, DC-RTS dependence on the epitaxial layer thickness of the sensors is discussed, showing that there is no significant difference for DC-RTS phenomenon in different epitaxial layers.
WOS记录号	WOS:000604218600004
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7786]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Li, YD (Li, Yudong)[ 1,2 ]
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.‎ Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Liu, BK ,Li, YD ,Wen, L ,et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors[J]. RESULTS IN PHYSICS,2020,19(12):1-7.
APA	Liu, BK .,Li, YD .,Wen, L .,Zhou, D .,Feng, J .,...&Guo, Q .(2020).Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors.RESULTS IN PHYSICS,19(12),1-7.
MLA	Liu, BK ,et al."Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors".RESULTS IN PHYSICS 19.12(2020):1-7.