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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 专题：苏州纳米技术与纳米仿生研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2018 作者:  Xing, Yao;  Li, Mo;  Wang, Wen-Jie;  Zhang, Yuan-Tao;  Du, Guo-Tong 收藏  |  浏览/下载：37/0  |  提交时间：2019/03/27 Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes 期刊论文 CHINESE PHYSICS B, 2018 作者:  Xing, Yao;  Liu, Shuang-Tao;  Liang, Feng;  Liu, Wei;  Zhu, Jian-Jun 收藏  |  浏览/下载：32/0  |  提交时间：2019/03/27 Current transport mechanism of Schottky contact of Pt/Au/n-InGaN 期刊论文 ACTA PHYSICA SINICA, 2018 作者:  Yu Guo-Hao(于国浩);  Deng Xu-Guang(邓旭光);  Li Jun-Shuai(李军帅);  Zhang Li;  Song Liang(宋亮) 收藏  |  浏览/下载：21/0  |  提交时间：2019/03/27 Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching 期刊论文 FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION, 2018 作者:  Sun, Yu-hua(孙玉华);  Lin, Wen-kui(林文魁);  Zhang, Xuan;  Li, Zhe(李哲);  Yang, Tao-tao(杨涛涛) 收藏  |  浏览/下载：54/0  |  提交时间：2019/03/27 Extension, closure and conversion of in-grown stacking faults in 4H-SiC epilayers 期刊论文 Materials Science Forum, 2018 作者:  Zhang, Xuan;  Li, Zhe(李哲);  Ju, Tao(鞠涛);  Zhang, Bao-Shun(张宝顺);  Zhang, Li-Guo(张立国) 收藏  |  浏览/下载：51/0  |  提交时间：2019/03/27 Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers 期刊论文 CRYSTAL RESEARCH AND TECHNOLOGY, 2018 作者:  Zhang, Bao-Shun(张宝顺);  Zhang, Ze-Hong(张泽红);  Zhang, Li-Guo(张立国);  Li, Zhe;  Zhang, Xuan(张璇) 收藏  |  浏览/下载：61/0  |  提交时间：2019/03/27 Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide 期刊论文 CHINESE PHYSICS B, 2017 作者:  Liang, Feng;  Zhao, De-Gang;  Jiang, De-Sheng;  Liu, Zong-Shun;  Zhu, Jian-Jun 收藏  |  浏览/下载：12/0  |  提交时间：2018/02/05 Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths 期刊论文 CHINESE PHYSICS B, 2017 作者:  Li, Xiang;  Zhao, De-Gang;  Jiang, De-Sheng;  Yang, Jing;  Chen, Ping 收藏  |  浏览/下载：27/0  |  提交时间：2018/02/05 Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes 期刊论文 CHINESE PHYSICS B, 2017 作者:  Liang, Feng;  Zhao, De-Gang;  Jiang, De-Sheng;  Liu, Zong-Shun;  Zhu, Jian-Jun 收藏  |  浏览/下载：26/0  |  提交时间：2018/02/05 Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials 期刊论文 CHINESE PHYSICS B, 2017 作者:  Yang, Jing;  Zhao, De-Gang;  Jiang, De-Sheng;  Chen, Ping;  Liu, Zong-Shun 收藏  |  浏览/下载：20/0  |  提交时间：2018/02/05