Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching

	Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching
	Sun, Yu-hua(孙玉华); Lin, Wen-kui(林文魁); Zhang, Xuan; Li, Zhe(李哲); Yang, Tao-tao(杨涛涛); Ju, Tao(鞠涛); Zhang, Bao-shun(张宝顺); Zeng, Chun-hong(曾春红)
刊名	FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION
	2018
其他题名	Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6322]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Sun, Yu-hua,Lin, Wen-kui,Zhang, Xuan,et al. Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching[J]. FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION,2018.
APA	Sun, Yu-hua.,Lin, Wen-kui.,Zhang, Xuan.,Li, Zhe.,Yang, Tao-tao.,...&Zeng, Chun-hong.(2018).Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching.FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION.
MLA	Sun, Yu-hua,et al."Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching".FOURTH SEMINAR ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION (2018).