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| Reliability of 4H-SiC Junction Barrier Schottky Diodes Under High Temperature Power Cycling Stress 会议论文 作者: Tang YD(汤益丹); Liu XY(刘新宇); Wang G(王刚); Luo YF(罗亚非); Bai Y(白云) 收藏  |  浏览/下载:16/0  |  提交时间:2019/05/14 |
| 一种制备原位掺杂Pt的NiO有序纳米线阵列的方法 专利 专利号: US9418843, 申请日期: 2016-08-16, 公开日期: 2014-07-24 作者: 李冬梅; 陈鑫; 梁圣法; 牛洁斌; 张培文 收藏  |  浏览/下载:13/0  |  提交时间:2017/06/09 |
| Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation 期刊论文 Chinese Physics B, 2016 作者: Xu H(徐昊); Yang H(杨红); Wang YR(王艳蓉); Luo WC(罗维春); Qi LW(祁路伟) 收藏  |  浏览/下载:17/0  |  提交时间:2017/05/09 |
| Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations 期刊论文 Chinese Physics B, 2016 作者: Xu H(徐昊); Yang H(杨红); Luo WC(罗维春); Wang YR(王艳蓉); Tang B(唐波) 收藏  |  浏览/下载:7/0  |  提交时间:2017/05/09 |
| Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures 期刊论文 Microelectronics Reliability, 2016 作者: Liu XY(刘新宇); Wu J(吴佳); Wang YY(王弋宇); Peng CY(彭朝阳); Li CZ(李诚瞻) 收藏  |  浏览/下载:13/0  |  提交时间:2017/05/08 |
| Low frequency noise measurements as a characterization tool for reliability assessment in AlGaN/GaN high-electron-mobilityTransistors (HEMTs) 会议论文 作者: Liu XY(刘新宇); Wei K(魏珂); Jin Z(金智); Zhao M(赵妙) 收藏  |  浏览/下载:8/0  |  提交时间:2016/06/15 |
| Mobility enhancement technology for scaling of CMOS devices: Overview and status 期刊论文 Journal of Electron Material, 2011 作者: Song Y(宋毅) 收藏  |  浏览/下载:9/0  |  提交时间:2012/11/16 |
| Study on electrothermally actuated cantilever array for nanolithography 外文期刊 2010 作者: Chen, DP; Ye, TC; Fu, JY 收藏  |  浏览/下载:12/0  |  提交时间:2010/11/26 |
| Improved electromigration reliability of surface acoustic wave devices using Ti/Al-Mo/Ti/Al-Mo electrodes 外文期刊 2009 作者: Li, DM; Liu, M 收藏  |  浏览/下载:9/0  |  提交时间:2010/11/26
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