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CORC

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Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 9, 页码: 096101
Sun HH (Sun He-Hui); Guo FY (Guo Feng-Yun); Li DY (Li Deng-Yue); Wang L (Wang Lu); Zhao DG (Zhao De-Gang); Zhao LC (Zhao Lian-Cheng)
收藏  |  浏览/下载：13/0  |  提交时间：2013/04/02
Dislocation scattering in alxga1-xn/gan heterostructures 期刊论文
Applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: 3
作者:  Xu, Xiaoqing;  Liu, Xianglin;  Han, Xiuxun;  Yuan, Hairong;  Wang, Jun
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11
Temperature and pressure dependences of the copper-related green emission in ZnO microrods 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 1, 页码: art.no.013107
Su FH (Su F. H.); Liu YF (Liu Y. F.); Chen W (Chen W.); Wang WJ (Wang W. J.); Ding K (Ding K.); Li GH (Li G. H.); Joly AG (Joly A. G.); McCready DE (McCready D. E.)
收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11
Dislocation scattering in a two-dimensional electron gas of an alxga1-xn/gan heterostructure 期刊论文
Physica status solidi b-basic research, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
作者:  Han, XX;  Li, DB;  Yuan, HR;  Sun, XH;  Liu, XL
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文
physica status solidi b-basic research, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
作者:  Han XX;  Li DB
收藏  |  浏览/下载：117/32  |  提交时间：2010/03/09
In0.25ga0.75as growth on low-temperature thin buffer layers formed on gaas (001) substrate 期刊论文
Journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Zhang, ZC;  Yang, SY;  Zhang, FQ;  Xu, B;  Zeng, YP
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12

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