In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate

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	In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
	Xu B
刊名	journal of crystal growth
	2003
卷号	247 期号:1-2 页码:126-130
关键词	dislocation interfaces strain molecular beam epitaxy semiconductor IIIV materials MOLECULAR-BEAM EPITAXY SURFACE-MORPHOLOGY TECHNOLOGY GAAS(001) BEHAVIOR SI
ISSN号	0022-0248
通讯作者	zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	high-quality in0.25ga0.75as films were grown on low-temperature (lt) ultra-thin gaas buffer layers formed on gaas (0 0 1) substrate by molecular beam epitaxy. the epilayers were studied by atomic force microscopy (afm), photo luminescence (pl) and double crystal x-ray diffraction (dcxrd), all the measurements indicated that lt thin buffer layer technique is a simple but powerful growth technique for heteroepitaxy. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11690]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate[J]. journal of crystal growth,2003,247(1-2):126-130.
APA	Xu B.(2003).In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate.journal of crystal growth,247(1-2),126-130.
MLA	Xu B."In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate".journal of crystal growth 247.1-2(2003):126-130.