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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
作者:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang
收藏  |  浏览/下载：25/0  |  提交时间：2018/05/23
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
scientific reports, 2015, 卷号: 5, 页码: 14386
X. Rong; X. Q. Wang; G. Chen; X. T. Zheng; P. Wang; F. J. Xu; Z. X. Qin; N. Tang; Y. H. Chen; L. W. Sang; M. Sumiya; W. K. Ge; B. Shen
收藏  |  浏览/下载：25/0  |  提交时间：2016/03/18
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 1, 页码: 012404
Barate, P; Liang, S; Zhang, TT; Frougier, J; Vidal, M; Renucci, P; Devaux, X; Xu, B; Jaffres, H; George, JM; Marie, X; Hehn, M; Mangin, S; Zheng, Y; Amand, T; Tao, B; Han, XF; Wang, Z; Lu, Y
收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25
High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes 期刊论文
nanoscale, 2013, 卷号: 5, 期号: 10, 页码: 4156-4161
Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng
收藏  |  浏览/下载：12/0  |  提交时间：2013/10/10
Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes 期刊论文
semiconductor science and technology, 2012, 卷号: 27, 期号: 3, 页码: 35008
Zheng, CC; Xu, SJ; Ning, JQ; Bao, W; Wang, JF; Gao, J; Liu, JM; Zhu, JH; Liu, XL
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/17
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403
Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载：84/11  |  提交时间：2010/08/12
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380
Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
收藏  |  浏览/下载：81/5  |  提交时间：2010/08/12
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载：23/0  |  提交时间：2010/11/15

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