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InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: 77304-77304
Gu, Y; Wang, K; Li, YY; Li, C; Zhang, YG
收藏  |  浏览/下载:13/0  |  提交时间:2011/11/03
Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 1999, 卷号: 48, 期号: 3, 页码: 556-560
Zhang, XH; Hu, YS; Wu, J; Cheng, ZQ; Xia, GQ; Xu, YS; Chen, ZH; Gui, YS; Chu, JH
收藏  |  浏览/下载:9/0  |  提交时间:2012/03/25


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