Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor

CORC > 上海微系统与信息技术研究所 > 功能材料与器件 > 期刊论文（1999年以前)

	Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor
	Zhang, XH ; Hu, YS ; Wu, J ; Cheng, ZQ ; Xia, GQ ; Xu, YS ; Chen, ZH ; Gui, YS ; Chu, JH
刊名	ACTA PHYSICA SINICA
	1999
卷号	48 期号:3 页码:556-560
关键词	CHEMICAL VAPOR-DEPOSITION LIGHT-EMITTING-DIODES SPACE-CHARGE-REGION MOLECULAR-BEAM EPITAXY PHASE-EPITAXY INGAALP ALLOYS LASER-DIODES RECOMBINATION EFFICIENCY PHOTOLUMINESCENCE
ISSN号	1000-3290
通讯作者	Zhang, XH, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=15&SID=4CFbDOkgC@mNJLpK96A&page=1&doc=1
语种	中文
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99053]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zhang, XH,Hu, YS,Wu, J,et al. Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor[J]. ACTA PHYSICA SINICA,1999,48(3):556-560.
APA	Zhang, XH.,Hu, YS.,Wu, J.,Cheng, ZQ.,Xia, GQ.,...&Chu, JH.(1999).Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor.ACTA PHYSICA SINICA,48(3),556-560.
MLA	Zhang, XH,et al."Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor".ACTA PHYSICA SINICA 48.3(1999):556-560.