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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：69/0  |  提交时间：2010/03/08
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：75/0  |  提交时间：2010/04/11
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation 期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang); Wang, ZG (Wang, Zhanguo)
收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29
A geometrical model of GaN morphology in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 115-120
作者:  Han PD
收藏  |  浏览/下载：79/8  |  提交时间：2010/08/12
Resonant Raman scattering of a-SiNx : H 期刊论文
materials letters, 2001, 卷号: 47, 期号: 1-2, 页码: 50-54
Wang Y; Yue RF; Han HX; Liao XB; Wang YQ; Diao HW; Kong GL
收藏  |  浏览/下载：65/0  |  提交时间：2010/08/12
Point defects in III-V compound semiconductors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Chen N
收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12

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