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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 发表日期：2008    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Promoting strain relaxation of si0.72ge0.28 film on si (100) substrate by inserting a low-temperature ge islands layer in uhvcvd 期刊论文 Applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 作者:  Zhou, Zhiwen;  Cai, Zhimeng;  Li, Cheng;  Lai, Hongkai;  Chen, Songyan 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Relaxed buffer  Sige film  Lt-ge layer  Strain relaxation  Uhvcvd   Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)] 期刊论文 Applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: 2 作者:  Zhou, Zhiwen;  Li, Cheng;  Chen, Songyan;  Lai, Hongkai;  Yu, Jinzhong 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd 期刊论文 Microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 作者:  Luo, Weijun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimie;  Ran, Junxue 收藏  |  浏览/下载：43/0  |  提交时间：2019/05/12 Algan/gan  High electron mobility transistor (hemt)  Si (111)   The influence of low-temperature ge seed layer on growth of high-quality ge epilayer on si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文 Journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513 作者:  Zhou, Zhiwen;  Li, Cheng;  Lai, Hongkai;  Chen, Songyan;  Yu, Jinzhong 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Characterization  Reflection high energy electron diffraction  X-ray diffraction  Chemical vapor deposition  Germanium   Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m 期刊论文 Optics communications, 2008, 卷号: 281, 期号: 6, 页码: 1582-1587 作者:  Mao, R. W.;  Tsai, C. S.;  Yu, J. Z.;  Wang, Q. M. 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Resonant cavity enhanced (rce)  Photodetector  Line-width  Free carrier absorption   Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 Chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 作者:  Gao Hong-Ling;  Zeng Yi-Peng;  Wang Bao-Qiang;  Zhu Zhan-Ping;  Wang Zhan-Guo 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Molecular beam epitaxy  Semiconducting iii-v materials  High electron mobility transistors   Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513 Zhou ZW; Li C; Lai HK; Chen SY; Yu JZ 收藏  |  浏览/下载：54/12  |  提交时间：2010/03/08 characterization   The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 GaN-based LED  grinding  ray tracing   Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文 applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 part 2 Zhou ZW; Cai ZM; Li C; Lai HK; Chen SY; Yu JZ 收藏  |  浏览/下载：67/0  |  提交时间：2010/03/08 Relaxed buffer