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Semiconductor laser device 专利
专利号: EP0493125B1, 申请日期: 1998-05-27, 公开日期: 1998-05-27
作者:  IRIKAWA, MICHINORI, THE FURUKAWA ELECTRIC CO., LTD;  IWASE, MASAYUKI, THE FURUKAWA ELECTRIC CO. LTD.,
收藏  |  浏览/下载:5/0  |  提交时间:2020/01/18
Semiconductor light-emitting device and production method thereof 专利
专利号: US5751013, 申请日期: 1998-05-12, 公开日期: 1998-05-12
作者:  KIDOGUCHI, ISAO;  ADACHI, HIDETO;  ISHIBASHI, AKIHIKO;  OHNAKA, KIYOSHI
收藏  |  浏览/下载:13/0  |  提交时间:2020/01/13
Spin-polarized resonant tunneling and quantum-size effect in ferromagnetic tunnel junctions with double barriers subjected to an electric field 期刊论文
PHYSICS LETTERS A, 1998, 卷号: 245, 期号: 1-2, 页码: 133
Zhang, XD; Li, BZ; Gang, S; Pu, FC
收藏  |  浏览/下载:9/0  |  提交时间:2013/09/24
Electroluminescence from both a light-emitting layer and hole transport layer: spectral evidence for charge carrier tunneling injection 期刊论文
化学物理学快报, 1998
Gao, XC; Cao, H; Huang, CH; Li, BG; Ibrahim, K; Liu, FQ; Umitani, S
收藏  |  浏览/下载:4/0  |  提交时间:2015/11/11
The inter-layer local-field corrections of weakly coupled electron-electron and electron-hole layers 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 卷号: 10, 期号: 34, 页码: 7535-7544
Dong, B; LEI, XL(雷啸霖)(雷啸霖)
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/25
Electroluminescence from both a light-emitting layer and hole transport layer: spectral evidence for charge carrier tunneling injection 期刊论文
CHEMICAL PHYSICS LETTERS, 1998, 卷号: 297, 期号: 5-6, 页码: 530-536
作者:  Gao, XC;  Cao, H;  Huang, CH;  Li, BG;  Ibrahim, K
收藏  |  浏览/下载:18/0  |  提交时间:2016/06/28
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM; Zeng YP; Zhou HW; Kong MY
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12


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