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	Semiconductor laser device
	IRIKAWA, MICHINORI, THE FURUKAWA ELECTRIC CO., LTD; IWASE, MASAYUKI, THE FURUKAWA ELECTRIC CO. LTD.,
	1998-05-27
著作权人	THE FURUKAWA ELECTRIC CO., LTD.
专利号	EP0493125B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device according to the invention comprises a semiconductor substrate (11), a multilayered double heterostructure having an active layer (14) and formed on said substrate (11) and a ridge waveguide further comprises a current blocking layer (12) formed between the semiconductor substrate (11) and the active layer (14). With such an arrangement, electric current is narrowed not only on the side of the ridge of the active layer (14) but also on the substrate side of the active layer to improve its current confinement effect. When the two lateral trenches of the ridge are embedded with resin layers (19), the ridge strip width can be made narrow to improve the heat conductance capability of the device. When the active layer (14) is realized in two discrete layers and a DCC structure having an intermediary clad layer is sandwiched therebetween, the device will show a low threshold current level, a minimum ϑ¦/ϑ ratio and stabilized thermal characteristics.
公开日期	1998-05-27
申请日期	1991-12-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88880]
专题	半导体激光器专利数据库
作者单位	THE FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	IRIKAWA, MICHINORI, THE FURUKAWA ELECTRIC CO., LTD,IWASE, MASAYUKI, THE FURUKAWA ELECTRIC CO. LTD.,. Semiconductor laser device. EP0493125B1. 1998-05-27.

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