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Method of growing a doped III-V alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped III-V alloy grown by such a method 专利
专利号: EP0031180A2, 申请日期: 1981-07-01, 公开日期: 1981-07-01
作者:  ROBERTS, JOHN STUART
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Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy 专利
专利号: US4261771, 申请日期: 1981-04-14, 公开日期: 1981-04-14
作者:  DINGLE, RAYMOND;  GOSSARD, ARTHUR C.;  PETROFF, PIERRE M.;  WIEGMANN, WILLIAM
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