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	Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
	DINGLE, RAYMOND; GOSSARD, ARTHUR C.; PETROFF, PIERRE M.; WIEGMANN, WILLIAM
	1981-04-14
著作权人	BELL TELEPHONE LABORATORIES, INCORPORATED
专利号	US4261771
国家	美国
文献子类	授权发明
其他题名	Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
英文摘要	Suitably modified molecular beam epitaxy (MBF) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs)n(AlAs)m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (AlxGa1-xAs)n(Ge2)m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.
公开日期	1981-04-14
申请日期	1979-10-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45776]
专题	半导体激光器专利数据库
作者单位	BELL TELEPHONE LABORATORIES, INCORPORATED
推荐引用方式 GB/T 7714	DINGLE, RAYMOND,GOSSARD, ARTHUR C.,PETROFF, PIERRE M.,et al. Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy. US4261771. 1981-04-14.

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