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北京大学 [4]

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长春光学精密机械与物... [1]

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	Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 2 作者: Chen, Xue; Zhang, Guozhen; Wan, Jiaxian; Guo, Tao; Li, Lei 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/12/05 aluminum atomic layer deposition bottom gate/top contacts oxide thin-film transistors zinc oxide
	Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition 期刊论文 Advanced Electronic Materials, 2019, 卷号: Vol.5 No.2 作者: Xue Chen; Guozhen Zhang; Jiaxian Wan; Tao Guo; Lei Li 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/17 aluminum atomic layer deposition bottom gate/top contacts oxide thin‐film transistors zinc oxide
	Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts 期刊论文 ELECTRONICS LETTERS, 2016 Zhang, Yi; Han, Dedong; Huang, Lingling; Dong, Junchen; Cong, Yingying; Cui, Guodong; Zhang, Xiaomi; Zhang, Xing; Zhang, Shengdong; Wang, Yi 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 thin film transistors electrical contacts tin zinc compounds indium compounds tin compounds tin-doped zinc oxide thin-film transistors heterojunction source-drain contacts bottom gate top contact thin-film transistors glass substrate indium tin oxide thin films alumni zinc oxide thin films AZO thin films aluminium thin films AZO S-D electrode saturation mobility subthreshold slope on-off current ratio output characteristic parasitic resistance contact performance t
	Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 页码: 875-881 作者: Li, Xifeng[1]; Zhu, Leyong[2]; Gao, Yana[3]; Zhang, Jianhua[4] 收藏 \| 浏览/下载：4/0 \| 提交时间：2019/04/26 Bottom gate top contact (BGTC) hafnium aluminum oxide (HAO) low voltage solution process thin-film transistors (TFTs) zinc indium tin oxide (ZITO)
	Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 25 Ye, DQ; Mei, ZX; Liang, HL; Li, JQ; Hou, YN; Gu, CZ; Azarov, A; Kuznetsov, A; Hong, WC; Lu, YC; Du, XL 收藏 \| 浏览/下载：23/0 \| 提交时间：2015/04/14 enhancement ZnO/MgZnO HFET bottom-gate
	Influence of Source and Drain Electrodes on Device Performance of ZnO Thin Film Transistors 期刊论文 INTEGRATED FERROELECTRICS, 2013, 卷号: 142, 期号: [db:dc_citation_issue], 页码: 73-78 作者: Dong, Ming; Wang, Hao; Li, Zhixiong; Zhang, Jieqiong; Ye, Cong 收藏 \| 浏览/下载：3/0 \| 提交时间：2019/12/03 off current ratio bottom gate HfO2 ZnO-TFT on
	The fabrication of thin film transistors with ZnO as active channel layer 期刊论文 Gongneng Cailiao/Journal of Functional Materials, 2008, 卷号: 39, 期号: 7, 页码: 1144-1146+1150 作者: Zhang, Xin-An; Zhang, Jing-Wen; Zhang, Wei-Feng; Wang, Dong; Bi, Zhen 收藏 \| 浏览/下载：4/0 \| 提交时间：2019/12/18 Active channel layers Bottom gate thin film transistors Fabrication of thin films Insulator layer Preferential orientation RF sputtering method Thermally oxidized ZnO films
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Yang X. T.; Ma X. M.; Zhu H. C.; Gao W. T.; Jin H.; Qi X. W.; Gao B.; Dong X. R.; Fu G. Z.; Jing H.; Wang C.; Chang Y. C.; Du G. T.; Cao J. L. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM 期刊论文 ieee电子器件汇刊, 2003 Zhang, SD; Chan, ACK; Han, RQ; Huang, R; Liu, XY; Wang, YY; Ko, PK; Chan, MS 收藏 \| 浏览/下载：1/0 \| 提交时间：2015/11/13 bottom-gate MOSFET self-aligned structure SRAM THIN-FILM TRANSISTORS PERFORMANCE POLYSILICON SILICON OXIDE OXIDATION MILC TFT
	Implementation of fully self-aligned bottom-gate MOS transistor 期刊论文 ieee electron device letters, 2002 Zhang, SD; Han, RQ; Zhang, ZK; Huang, R; Ko, PK; Chan, MS 收藏 \| 浏览/下载：2/0 \| 提交时间：2015/11/16 bottom-gate low-pressure chemical vapor deposition (LPCVD) MOSFET self-aligned structure static random access memory (SRAM) PERFORMANCE POLYSILICON

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