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Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 3711-3728
作者:
Xie, Ruiliang
;
Yang, Xu
;
Xu, Guangzhao
;
Wei, Jin
;
Wang, Yuru
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/11/19
Analytical approach
GaN HEMTs
Junction capacitances
Physical behaviors
Schottky junctions
Switching transient
Terminal measurements
Threshold-voltage instabilities
Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors
期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60
作者:
Zhu, Gengchang
;
Liang, Guangda
;
Zhou, Yang
;
Chen, Xiufang
;
Xu, Xiangang
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  |  
浏览/下载:23/0
  |  
提交时间:2019/12/11
Reactive evaporation
SiOx
Passivation
GaN
HEMTs
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:
Hongliang Zhao
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  |  
浏览/下载:35/0
  |  
提交时间:2019/12/17
HEMTs
Wide band gap semiconductors
Aluminum gallium nitride
Logic gates
Oscillators
Mathematical model
Schottky diodes
AlGaN/GaN
electron domain
high-electron mobility transistor (HEMT)
recessed barrier layer (RBL)
terahertz
Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer
期刊论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, 2019
作者:
Guo, Haijun
;
Cao, Chao
;
Duan, Baoxing
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/11
AlGaN/GaN HEMTs
Analytical model
Electric field modulation
Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Ftched AlGaN Barrier Layer
会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 12-14, 2019
作者:
Guo, Haijun
;
Cao, Chao
;
Duan, Baoxing
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/31
AlGaN/GaN HEMTs
analytical model
electric field modulation
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:
Z.M.Shi
;
X.J.Sun
;
Y.P.Jia
;
X.K.Liu
;
S.L.Zhang
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  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
FEM thermal analysis of high power GaN-on-diamond HEMTs
期刊论文
Journal of Semiconductors, 2018, 卷号: 39
作者:
Chen, Xudong
;
Zhai, Wenbo
;
Zhang, Jingwen
;
Bu, Renan
;
Wang, Hongxing
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  |  
浏览/下载:5/0
  |  
提交时间:2019/11/19
FEM
GaN-on-diamond HEMTs
self-heating
temperature distribution
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
期刊论文
MICROMACHINES, 2018, 卷号: 9
作者:
Huang, Huolin
;
Li, Feiyu
;
Sun, Zhonghao
;
Cao, Yaqing
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/02
threshold voltage (V-th) stability
gallium nitride (GaN)
high electron mobility transistors (HEMTs)
analytical model
high-temperature operation
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
会议论文
作者:
Cui, Miao
;
Cai, Yutao
;
Lam, Sang
;
Liu, Wen
;
Zhao, Chun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Frequency dependence
Frequency independent
High-voltage switching
Metal-insulator-semiconductors
MIS-HEMT
Threshold voltage shifts
Voltage hysteresis
Deeply Supervised Depth Map Super-Resolution as Novel View Synthesis
期刊论文
IEEE Transactions on Circuits and Systems for Video Technology, 2018
作者:
Song X.
;
Dai Y.
;
Qin X.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/11
Cameras
Color
Convolutional Neural Network
Deconvolution
Depth Map
DH-HEMTs
Novel View Synthesis
Spatial resolution
Super-Resolution
Task analysis
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