×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
上海大学 [14]
重庆大学 [1]
华南理工大学 [1]
中国水产科学院 [1]
暨南大学 [1]
内容类型
期刊论文 [18]
发表日期
2019 [1]
2018 [5]
2017 [7]
2016 [4]
2012 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共18条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 1308-1313
作者:
Zhou, You-Hang[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Li, Xi-Feng[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/22
Aqueous solutionmethod
oxygen-related defect
SrInO thin-film transistor (TFT)
stability
Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
B doping concentration
boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)
negative bias illumination stress (NBIS) stability
solution process
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:
Zhao, Cheng-Yu[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/04/24
ZrO2 gate insulator
lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)
solution process
stability
Atomic Layer Deposited ZrxAl1-xOy Film as High Gate Insulator for High Performance ZnSnO Thin Film Transistor
期刊论文
ELECTRONIC MATERIALS LETTERS, 2018, 卷号: 14, 页码: 669-677
作者:
Li, Jun[1]
;
Zhou, You-Hang[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Huang, Jian[5]
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
Atomic layer deposition
ZrxAl1-xOy thin films
ZTO TFTs
NBIS stability
TS stability
The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 377-386
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhou, You-Hang[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/04/22
BInZnO thin film
Oxygen vacancy
Thermal stability
Solution process
High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2838-2843
作者:
Li, Jun[1]
;
Zhong, De-Yao[2]
;
Huang, Chuan-Xin[3]
;
Li, Xi-Feng[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/22
Inverter
solution process
stability
thin-film transistors (TFTs)
Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 109, 页码: 852-859
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Zhao, Cheng-Yu[4]
;
Zhu, Wen-Qing[5]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/24
Atomic layer deposition
ZrA10(x) gate insulator
ZTO TFTs
PBS stability
Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4959-4964
作者:
Li, Jun[1]
;
Huang, Chuan-Xin[2]
;
Zhao, Cheng-Yu[3]
;
Zhong, De-Yao[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
AlZrOx insulator
atomic layer deposition
stability
thin-film transistors (TFTs)
The Apostasia genome and the evolution of orchids
期刊论文
NATURE, 2017, 卷号: 549, 页码: 379-+
作者:
Zhang, Guo-Qiang[1,2]
;
Liu, Ke-Wei[1,2]
;
Li, Zhen[3,4]
;
Lohaus, Rolf[3,4]
;
Hsiao, Yu-Yun[5,6]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/04/24
Realization of solution-processed semiconducting single-walled carbon nanotubes thin film transistors with atomic layer deposited ZrAlOx gate insulator
期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 110
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Zhao, Cheng-Yu[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/24
©版权所有 ©2017 CSpace - Powered by
CSpace