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	Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors
	Huang, Chuan-Xin[1]; Li, Jun[2]; Zhong, De-Yao[3]; Zhao, Cheng-Yu[4]; Zhu, Wen-Qing[5]; Zhang, Jian-Hua[6]; Jiang, Xue-Yin[7]; Zhang, Zhi-Lin[8]
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2017
卷号	109页码:852-859
关键词	Atomic layer deposition ZrA10(x) gate insulator ZTO TFTs PBS stability
ISSN号	0749-6036
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2184467
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 6.[6]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 9.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Chuan-Xin[1],Li, Jun[2],Zhong, De-Yao[3],et al. Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2017,109:852-859.
APA	Huang, Chuan-Xin[1].,Li, Jun[2].,Zhong, De-Yao[3].,Zhao, Cheng-Yu[4].,Zhu, Wen-Qing[5].,...&Zhang, Zhi-Lin[8].(2017).Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors.SUPERLATTICES AND MICROSTRUCTURES,109,852-859.
MLA	Huang, Chuan-Xin[1],et al."Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors".SUPERLATTICES AND MICROSTRUCTURES 109(2017):852-859.

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