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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AIK1, A Mitogen-Activated Protein Kinase, Modulates Abscisic Acid Responses through the MKK5-MPK6 Kinase Cascade 期刊论文 PLANT PHYSIOLOGY, 2017, 卷号: 173, 期号: 2, 页码: 1391-1408 作者:  Li, Kun[1];  Yang, Fengbo[2];  Zhang, Guozeng[3];  Song, Shufei[4];  Li, Yuan[5] 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23 Abscisic Acid as an Internal Integrator of Multiple Physiological Processes Modulates Leaf Senescence Onset in Arabidopsis thaliana 期刊论文 FRONTIERS IN PLANT SCIENCE, 2016, 卷号: 7, 页码: 181 作者:  Song Yuwei[1];  Xiang Fuyou[2];  Zhang Guozeng[3];  Miao Yuchen[4];  Miao Chen[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/23 abscisic acid  leaf senescence  chlorophyll fluorescence  guard cell  cytosolic calcium   A Receptor-Like Kinase Mediates Ammonium Homeostasis and Is Important for the Polar Growth of Root Hairs in Arabidopsis 期刊论文 PLANT CELL, 2014, 卷号: 26, 期号: 4, 页码: 1497-1511 作者:  Bai, Ling[1];  Ma, Xiaonan[2];  Zhang, Guozeng[3];  Song, Shufei[4];  Zhou, Yun[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23 Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Zhang, Xiufang[1];  Ma, Chenyue[2];  Zhao, Wei[3];  Zhang, Chenfei[4];  Wang, Guozeng[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/30 An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Chenfei[1,2,3];  Ma, Chenyue[2,3];  Xu, Jiaojiao[1];  Wang, Ruonan[2];  Zhao, Xiaojin[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/15 Interface Trap  Gate Oxide Trap  Subthreshold Current   Comparison and Insight into Long-Channel MOSFET Drain Current Models (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Lining[1,2];  He, Jin[1,2];  Wu, Wen[1];  Wang, Guozeng[1];  Wu, Wen[1] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/15 MOSFET models  charge-sheet approximation  drain current model   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15