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科研机构
华南理工大学 [3]
河南大学 [3]
上海大学 [1]
内容类型
会议论文 [4]
期刊论文 [3]
发表日期
2017 [1]
2016 [1]
2014 [1]
2011 [1]
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AIK1, A Mitogen-Activated Protein Kinase, Modulates Abscisic Acid Responses through the MKK5-MPK6 Kinase Cascade
期刊论文
PLANT PHYSIOLOGY, 2017, 卷号: 173, 期号: 2, 页码: 1391-1408
作者:
Li, Kun[1]
;
Yang, Fengbo[2]
;
Zhang, Guozeng[3]
;
Song, Shufei[4]
;
Li, Yuan[5]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/23
Abscisic Acid as an Internal Integrator of Multiple Physiological Processes Modulates Leaf Senescence Onset in Arabidopsis thaliana
期刊论文
FRONTIERS IN PLANT SCIENCE, 2016, 卷号: 7, 页码: 181
作者:
Song Yuwei[1]
;
Xiang Fuyou[2]
;
Zhang Guozeng[3]
;
Miao Yuchen[4]
;
Miao Chen[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/23
abscisic acid
leaf senescence
chlorophyll fluorescence
guard cell
cytosolic calcium
A Receptor-Like Kinase Mediates Ammonium Homeostasis and Is Important for the Polar Growth of Root Hairs in Arabidopsis
期刊论文
PLANT CELL, 2014, 卷号: 26, 期号: 4, 页码: 1497-1511
作者:
Bai, Ling[1]
;
Ma, Xiaonan[2]
;
Zhang, Guozeng[3]
;
Song, Shufei[4]
;
Zhou, Yun[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/23
Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance
会议论文
NSTI Nanotechnology Conference and Expo, 2011-06-13
作者:
Zhang, Xiufang[1]
;
Ma, Chenyue[2]
;
Zhao, Wei[3]
;
Zhang, Chenfei[4]
;
Wang, Guozeng[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/30
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Zhang, Chenfei[1,2,3]
;
Ma, Chenyue[2,3]
;
Xu, Jiaojiao[1]
;
Wang, Ruonan[2]
;
Zhao, Xiaojin[2]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/15
Interface Trap
Gate Oxide Trap
Subthreshold Current
Comparison and Insight into Long-Channel MOSFET Drain Current Models (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Zhang, Lining[1,2]
;
He, Jin[1,2]
;
Wu, Wen[1]
;
Wang, Guozeng[1]
;
Wu, Wen[1]
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/04/15
MOSFET models
charge-sheet approximation
drain current model
Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Zhang, Xiufang[1,2]
;
Ma, Chenyue[2]
;
Zhao, Wei[2]
;
Zhang, Chenfei[3]
;
Wang, Guozeng[2]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/15
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