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科研机构
华南理工大学 [6]
上海大学 [3]
内容类型
会议论文 [8]
会议 [1]
发表日期
2011 [2]
2010 [1]
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Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance
会议论文
NSTI Nanotechnology Conference and Expo, 2011-06-13
作者:
Zhang, Xiufang[1]
;
Ma, Chenyue[2]
;
Zhao, Wei[3]
;
Zhang, Chenfei[4]
;
Wang, Guozeng[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/30
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
会议论文
NSTI Nanotechnology Conference and Expo, 2011-06-13
作者:
Xu, Jiaojiao[1]
;
Ma, Chenyue[2]
;
Zhang, Chenfei[3]
;
Zhang, Xiufang[4]
;
Wu, Wen[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/30
FinFET device
process fluctuation
vertical nonuniformity
performance variation
A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance
会议论文
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15
作者:
Guo, Xinjie[1]
;
Wang, Shaodi[2]
;
Ma, Chenyue[3]
;
Zhang, Chenfei[4]
;
Lin, Xinnan[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/30
Investigation of The NBTI Induced Mobility Degradation for Precise Circuit Aging Simulation (CPCI-S收录)
会议
作者:
Ma, Chenyue[1]
;
Li, Xiangbin[1]
;
Sun, Fu[1]
;
Zhang, Lining[2]
;
Lin, Xinnan[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/11
NBTI
mobility degradation
hot carrier injection
self-heating effect
coupling
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Xu, Jiaojiao[2,3]
;
Ma, Chenyue[3]
;
Zhang, Chenfei[3]
;
Zhang, Xiufang[3]
;
Wu, Wen[1]
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/04/15
FinFET device
process fluctuation
vertical nonuniformity
performance variation
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Zhang, Chenfei[1,2,3]
;
Ma, Chenyue[2,3]
;
Xu, Jiaojiao[1]
;
Wang, Ruonan[2]
;
Zhao, Xiaojin[2]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/15
Interface Trap
Gate Oxide Trap
Subthreshold Current
Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录)
会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:
Zhang, Xiufang[1,2]
;
Ma, Chenyue[2]
;
Zhao, Wei[2]
;
Zhang, Chenfei[3]
;
Wang, Guozeng[2]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/15
Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intri (CPCI-S收录)
会议论文
NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING
作者:
Zhou, Xingye[1]
;
Zhang, Jian[1]
;
Zhang, Lining[1]
;
Ma, Chenyue[1]
;
He, Jin[1,2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/17
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs (CPCI-S收录)
会议论文
MOLECULAR SIMULATION
作者:
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/17
non-classical MOS transistor
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
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