QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文 ELECTRONICS, 2019, 卷号: 8 作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Sun, Nan;  Zhang, Feng 收藏  |  浏览/下载：26/0  |  提交时间：2019/12/02 vertical field-effect transistor (VFET)  back current blocking layer (BCBL)  gallium nitride (GaN)  normally off power devices   Efficacy and safety of ranibizumab 0.5 mg in Chinese patients with visual impairment due to diabetic macular edema: results from the 12-month REFINE study 期刊论文 2019, 卷号: 257, 期号: 3, 页码: 529-541 作者:  Li, Xiaoxin;  Dai, Hong;  Li, Xiaorong;  Han, Mei;  Li, Jun 收藏  |  浏览/下载：170/0  |  提交时间：2020/01/03 Anti-vascular endothelial growth factor  Diabetic macular edema  Pro re nata  Ranibizumab   Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文 Electronics, 2019, 卷号: 8, 页码: 241 作者:  Huolin Huang ;   Feiyu Li ;   Zhonghao Sun ;   Nan Sun ;   Feng Zhang ;   Yaqing Cao ;  Hui Zhang Pengcheng Tao 收藏  |  浏览/下载：4/0  |  提交时间：2020/07/30 Normal-State Hourglass Dispersion of the Spin Excitations in FeSe(x)Te(1-x) 期刊论文 PHYSICAL REVIEW LETTERS, 2010, 卷号: 105, 期号: 15, 页码: - 作者:  Li, SL , Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;  Li, Shiliang;  Zhang, Chenglin;  Wang, Meng;  Luo, Hui-qian 收藏  |  浏览/下载：12/0  |  提交时间：2012/08/02 Temperature Superconductor