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First-Principles Study on electronic structure and optical properties of monolayer MoMS 期刊论文
Solid State Communications, 2019
作者:  Xianhong Tang;  Tian Chen;  Yuehua Dai;  Fei Yang;  Daoming Ke
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
First-Principles study on electronic structure and optical properties of monolayer MoMS 期刊论文
Solid State Communications, 2019, 卷号: Vol.295, 页码: 22-25
作者:  Xianhong Tang;  Tian Chen;  Yuehua Dai;  Fei Yang;  Daoming Ke
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
First-principles study of the properties for crystal Ge(2)Sb(2)Te(5 )with Ge vacancy 期刊论文
AIP ADVANCES, 2018, 卷号: Vol.8 No.6
作者:  Yan, Beibei;  Chen, Tian;  Wang, Minglei;  Wan, Luxu;  Dai, Yuehua
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
First-principles study of the properties for crystal Ge2Sb2Te5with Ge vacancy 期刊论文
AIP Advances, 2018, 卷号: Vol.8 No.6
作者:  Yan, Beibei;  Chen, Tian;  Wang, Minglei;  Wan, Luxu;  Dai, Yuehua
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
First principles study of crystal Si-doped Ge2Sb2Te5 期刊论文
Solid State Communications, 2017, 卷号: Vol.252, 页码: 6-10
作者:  Yan, Beibei;  Chang, Hong;  Chen, Tian;  Wang, Minglei;  Dai, Yuehua
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: Vol.55 No.1
作者:  Hu,Pengfei;  He,Pei;  Ke,Daoming
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/22
The threshold voltage property research and structure design of MOSFET with stack-gate 期刊论文
2011 International Conference on Information Science and Technology, ICIST 2011, 2011, 页码: 199-201
作者:  Ke,Daoming;  Zhao,Yang;  Meng,Jian
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/22
Capacitance performance of Single Material Double Workfunction Gate(SMDWG) MOSFET 期刊论文
Proceedings - 5th International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2009, 2009
作者:  Junsheng,Li;  Junning,Chen;  Daoming,Ke;  Yuehua,Dai
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Horizontal dispersion oxide semiconductor of heterogeneous bar multi-step field electrode board 专利
申请日期: 2007-01-01,
作者:  XIULONG WU;  YUEHUA DAI;  CHAO XU;  DAOMING KE;  JIAN MENG
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/19
Regular perturbation method for studying the subthreshold characteristics of nano-scaled MOSFETs 期刊论文
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 卷号: Vol.28 No.2, 页码: 237-240
作者:  Chen,Junning;  Ke,Daoming;  Dai,Yuehua
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24

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