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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Breakdown voltage (BV)  lateral double-diffused MOS (LDMOS)  N-island (NIS)  partial silicon-on-insulator (PSOI)  step-doped drift (SDD) region  BURIED P LAYER  POWER LDMOS  IMPROVEMENT  DEVICES  TRENCH  FILM  TRANSISTOR   A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devices 期刊论文 international journal of electronics, 2002 He, J; Zhang, X; Wang, YY 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10 BREAKDOWN VOLTAGE  MOSFETS   A concise analytical model for the surface field distribution of TFSOI RESURF devices including interface charge effect 期刊论文 chinese journal of electronics, 2002 He, J; Zhang, X; Huang, R; Wang, YY 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 thin film silicon-on-insulator (TFSOI)  reduced surface field (RESURF)  power devices  surface field  interface charge  breakdown voltage  BREAKDOWN VOLTAGE  SOI  MOSFETS  FILM   Analytical model for the ideal breakdown voltage and optimum doping profile of SOI RESURF LDMOS 期刊论文 chinese journal of electronics, 2001 He, J; Zhang, X; Huang, R; Wang, YY 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 LDMOS  breakdown voltage  silicon-on-insulator (SOI) reduced surface field  (RESURF) structure  optimum doping profile  power device  high voltage power integration circuits (HVIC)  DEVICES