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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:  Cheng, Wangping;  Li, Chenhui;  Zhou, Chen;  He, Yuandi;  Wei, Renhuai
收藏  |  浏览/下载:17/0  |  提交时间:2022/12/23
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu
收藏  |  浏览/下载:68/0  |  提交时间:2022/01/12
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long
收藏  |  浏览/下载:49/0  |  提交时间:2021/10/15
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long
收藏  |  浏览/下载:22/0  |  提交时间:2021/10/14
A comprehensive investigation of MoO3 based resistive random access memory 期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345
作者:  Fatheema, Jameela;  Shahid, Tauseef;  Mohammad, Mohammad Ali;  Islam, Amjad;  Malik, Fouzia
收藏  |  浏览/下载:20/0  |  提交时间:2020/12/16
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载:77/0  |  提交时间:2019/11/10
First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory 期刊论文
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 卷号: Vol.8 No.1, 页码: Q5-Q8
作者:  Yu, Li;  Cai, Daolin;  Chen, Yifeng;  Lu, Yaoyao;  Yan, Shuai
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/17
Redesigning pipeline when architecting STT-RAM as registers in rad-hard environment 期刊论文
SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS, 2019, 卷号: 22, 页码: 206-218
作者:  Gong, Zhiyao;  Qiu, Keni;  Chen, Weiwen;  Ni, Yuanhui;  Xu, Yuanchao
收藏  |  浏览/下载:22/0  |  提交时间:2019/12/30
Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour 期刊论文
Journal of Colloid and Interface Science, 2019, 卷号: 553, 页码: 682-687
作者:  B.Sun;  T.Guo;  G.D.Zhou;  S.Ranjan;  W.T.Hou
收藏  |  浏览/下载:0/0  |  提交时间:2020/08/24
The impact of RTN signal on array level resistance fluctuation of resistive random access memory 期刊论文
Electron Device Letters, 2018
作者:  Xu XX(许晓欣);  Chen CB(陈传兵);  Liu J(刘璟);  Dong DN(董大年);  Yuan P(袁鹏)
收藏  |  浏览/下载:27/0  |  提交时间:2019/04/18


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