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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:
He, Ze
;
Zhao, Shi-Wei
;
Liu, Tian-Qi
;
Cai, Chang
;
Yan, Xiao-Yu
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2022/01/12
Double interlocked storage cell (DICE)
Error detection and correction (EDAC) code
Heavy ion
Radiation hardening technology
Single event upset (SEU)
Static random-access memory (SRAM)
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:
Liu, Nan
;
Cao, Yi
;
Zhu, Yin-Lian
;
Wang, Yu-Jia
;
Tang, Yun-Long
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  |  
浏览/下载:49/0
  |  
提交时间:2021/10/15
resistive switching
spinodal decomposition
perovskites
atomic force microscopy
transmission electron microscopy
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
作者:
Liu, Nan
;
Cao, Yi
;
Zhu, Yin-Lian
;
Wang, Yu-Jia
;
Tang, Yun-Long
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/10/14
resistive switching
spinodal decomposition
perovskites
atomic force microscopy
transmission electron microscopy
A comprehensive investigation of MoO3 based resistive random access memory
期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345
作者:
Fatheema, Jameela
;
Shahid, Tauseef
;
Mohammad, Mohammad Ali
;
Islam, Amjad
;
Malik, Fouzia
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  |  
浏览/下载:20/0
  |  
提交时间:2020/12/16
SWITCHING CHARACTERISTICS
NONVOLATILE MEMORY
LOW-POWER
PERFORMANCE
MECHANISMS
SUBSTRATE
DEVICES
RRAM
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
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  |  
浏览/下载:77/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory
期刊论文
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 卷号: Vol.8 No.1, 页码: Q5-Q8
作者:
Yu, Li
;
Cai, Daolin
;
Chen, Yifeng
;
Lu, Yaoyao
;
Yan, Shuai
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/17
Redesigning pipeline when architecting STT-RAM as registers in rad-hard environment
期刊论文
SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS, 2019, 卷号: 22, 页码: 206-218
作者:
Gong, Zhiyao
;
Qiu, Keni
;
Chen, Weiwen
;
Ni, Yuanhui
;
Xu, Yuanchao
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/12/30
Electromagnetic waves
Embedded systems
Merging
Pipelines
Radiation hardening
Static random access storage
Data dependencies
Emerging non-volatile memory
High radiation resistance
Micro architectures
Nonvolatility
Single event
Single event upsets
Spin transfer torque
Radiation effects
Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour
期刊论文
Journal of Colloid and Interface Science, 2019, 卷号: 553, 页码: 682-687
作者:
B.Sun
;
T.Guo
;
G.D.Zhou
;
S.Ranjan
;
W.T.Hou
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
Resistive switching,Tunneling,Photon-generated carrier,Schottky,barrier,Memory device,wo3 nanoflakes,resistance,mechanism,device,Chemistry
The impact of RTN signal on array level resistance fluctuation of resistive random access memory
期刊论文
Electron Device Letters, 2018
作者:
Xu XX(许晓欣)
;
Chen CB(陈传兵)
;
Liu J(刘璟)
;
Dong DN(董大年)
;
Yuan P(袁鹏)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/04/18
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