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	First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory
	Yu, Li; Cai, Daolin; Chen, Yifeng; Lu, Yaoyao; Yan, Shuai; Wu, Lei; Liu, Yuanguang; Li, Yang; Lu, Junjie; Song, Zhitang
刊名	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
	2019
卷号	Vol.8 No.1页码:Q5-Q8
ISSN号	2162-8769
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4746393
专题	湖南大学
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Yu, Li,Cai, Daolin,Chen, Yifeng,et al. First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2019,Vol.8 No.1:Q5-Q8.
APA	Yu, Li.,Cai, Daolin.,Chen, Yifeng.,Lu, Yaoyao.,Yan, Shuai.,...&Song, Zhitang.(2019).First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,Vol.8 No.1,Q5-Q8.
MLA	Yu, Li,et al."First Set Pulse Impacts on Set Resistance Distribution of Phase Change Random Access Memory".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Vol.8 No.1(2019):Q5-Q8.

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