CORC

在结果中检索

CORC

浏览/检索结果: 共252条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Structural and compositional analysis of (InGa) (AsSb)/GaAs/GaP Stranski-Krastanov quantum dots 期刊论文
Light-Science & Applications, 2021, 卷号: 10, 期号: 1, 页码: 13
作者:  R. S. R. Gajjela;  A. L. Hendriks;  J. O. Douglas;  E. M. Sala;  P. Steindl
收藏  |  浏览/下载：4/0  |  提交时间：2022/06/13
Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2020, 卷号: 127, 期号: 1, 页码: 015302
作者:  Weijiang Li;   Xiang Zhang;   Jie Zhao;   Jianchang Yan;   Zhiqiang Liu;   Junxi Wang;   Jinmin Li;   Tongbo Wei
收藏  |  浏览/下载：30/0  |  提交时间：2021/12/16
Characterization of Zn-doped GaN grown by metal-organic vapor phase epitaxy 期刊论文
Rare Metals, 2020, 卷号: 39, 期号: 11, 页码: 1328-1332
作者:  C. T. Wu,Y. Zhou,Q. Y. Sun,L. Q. Huang,A. L. Li and Z. M. Li
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission† 期刊论文
CRYSTENGCOMM, 2020, 卷号: 22, 期号: 18, 页码: 3122-3129
作者:  Weijiang Li;   Liang Guo;   Shengnan Zhang;   Qiang Hu;   Hongjuan Cheng;   Junxi Wang;   Jinmin Li;   Tongbo Wei
收藏  |  浏览/下载：30/0  |  提交时间：2021/06/16
Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition 期刊论文
CRYSTAL GROWTH & DESIGN, 2018, 卷号: 18, 页码: 1147-1154
作者:  Chen, Yuanpeng;  Xia, Xiaochuan;  Liang, Hongwei;  Abbas, Qasim;  Liu, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02
Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: Vol.215 No.8
作者:  Carl Reuterskiöld Hedlund;  Olof Öberg;  Jang‐Kwon Lim;  Qin Wang;  Michael Salter
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/26
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.
收藏  |  浏览/下载：3/0  |  提交时间：2019/09/17
Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate 期刊论文
2016, 2016
周旭亮; 潘教青; 梁仁荣; 王敬; 王圩; Zhou Xuliang; Pan Jiaoqing; Liang Renrong; Wang Jing; Wang Wei
收藏  |  浏览/下载：4/0
Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate 期刊论文
materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287
作者:  Lin, Tao;  Sun, Ruijuan;  Sun, Hang;  Guo, Enmin;  Duan, Yupeng
收藏  |  浏览/下载：14/0  |  提交时间：2016/01/11
VECSEL  MOVPE  InGaAs  
Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  Jiang, T;  Xu, SR;  Zhang, JC;  Li, PX;  Huang, J(黄俊)
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11

©版权所有 ©2017 CSpace - Powered by CSpace